One Time Programmable Memory

Single-Chip Passive UHF RFID Tags and Readers

Department of Electrical & Electronic Engineering

Project Goal

The goal of this project is to develop, fabricate and characterize a zero-additional mask one time programmable memory devices and array in standard CMOS process.

Project Description

The memory device developed requires no additional mask to standard CMOS. Several OTP devices have been fabricated and characterized and evaluated in terms of RFID requirements such as low-power programming. Memory peripheral circuitries, including a high-voltage switching circuit using conventional MOS devices, have been developed to control the programming of the OTP devices.

Faculty

Prof. Mansun J. CHAN ( 陳文新 )

Research Assistant

Randy BARSATAN

Tracking Record and Accomplishment

Stage	Milestone	Status
Phase I	Functional Description of the memory	Accomplished
Phase II	Device design and fabrication	Accomplished
Phase III	Device characterization and evaluation	Accomplished
Phase III	Circuit development – design and simulation	Accomplished
Phase IV	Sub-array fabrication	Accomplished
Phase V	Memory subcircuits and additional device characterization	Ongoing
Phase VI	Memory array circuit design and tag fabrication

Fabrication

Memory Circuit Die Photo